首页 >CET01N65A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.2A,RDS(ON)=10.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,0.9A,RDS(ON)=15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
TO-263-2LPlastic-EncapsulateMOSFETS | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
Plastic-EncapsulateMOSFETS | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
N-ChannelPowerMOSFET | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
Plastic-EncapsulateMOSFETS | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
Plastic-EncapsulateMOSFETS | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
N-ChannelPowerMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
TO-92Plastic-EncapsulateMOSFETS | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI |
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