P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -4.3A, RDS(ON) = 42mW @VGS = -4.5V. RDS(ON) = 55mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. RDS(ON) = 75mW @VGS = -1.8V.

文件：431.8 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 4.2 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：482.43 Kbytes 页数：3 Pages

CHENMKO

力勤

PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS

文件：177.56 Kbytes 页数：2 Pages

CDIL

PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS

文件：177.56 Kbytes 页数：2 Pages

CDIL