CES2331A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-4.3A,RDS(ON)=42mW@VGS=-4.5V. RDS(ON)=55mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=75mW@VGS=-1.8V.

CHM2331PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT4.2Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CSC2331

PNP/NPNCOMPLEMENTARYPLANARSILICONTRANSISTORS

CSC2331NPN

PNP/NPNCOMPLEMENTARYPLANARSILICONTRANSISTORS

CYW2331

DualSerialInputPLLwith2.0-GHzand600-MHzPrescalers

FA2331U

MATCHEDPAIRANDQUADASSEMBLIESDIODES

HBL2331SW

ManualMotorControllersandDisconnects

INA2331

Low-Power,Single-Supply,CMOSINSTRUMENTATIONAMPLIFIERS

INA2331

INSTRUMENTATIONAMPLIFIERS

INA2331

Low-Power,Single-Supply,CMOSINSTRUMENTATIONAMPLIFIERS

FEATURES DESIGNEDFORLOWCOST HIGHGAINACCURACY:G=5,0.02%,2ppm/°C GAINSETWITHEXT.RESISTORSFOR>5V/V LOWOFFSETVOLTAGE:±250μV HIGHCMRR:94dBDC,50dBat45kHz LOWBIASCURRENT:0.5pA BANDWIDTH,SLEWRATE:2.0MHz,5V/μs RAIL-TO-RAILOUTPUTSWING:(V+)–0.02V WIDETEMPER