N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 5.2A, RDS(ON) = 29mΩ (typ) @VGS = 10V. RDS(ON) = 45mΩ (typ) @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

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CET

华瑞

N Channel Product

CET

华瑞

Mechanical Buzzer (DC)

文件：900.58 Kbytes 页数：1 Pages

CANOPUS

Inductor for Digital AMP

Features： Core material:Ferrite Core and winding loss: www.codaca.com/DesignTool_Power-Inductor-Loss-Comparison.html Environmental:RoHS compliant, halogen free Weight:36.96g Moisture Sensitivity:Level (MSL) 1 (unlimited floor life at

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CODACA

科达嘉电子

3.0 Volts 3.3 grams (0.10 oz.) 0.83 cubic centimeters (0.05 cubic inch)

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ENERGIZER

劲量