CES2320

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,5.2A,RDS(ON)=29mΩ(typ)@VGS=10V. RDS(ON)=45mΩ(typ)@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CMEB2320

MechanicalBuzzer(DC)

CPD2320

InductorforDigitalAMP

Features： Corematerial:Ferrite Coreandwindingloss: www.codaca.com/DesignTool_Power-Inductor-Loss-Comparison.html Environmental:RoHScompliant,halogenfree Weight:36.96g MoistureSensitivity:Level(MSL)1 (unlimitedfloorlifeat

CR2320

LITHIUMCOINCELL

BATTERIES •MemorybackupapplicationssuchasGPSdevices,gameconsolesetc •ManufacturedtoIS9002andULapproved •Diameterrangefrom12.5mmto24.5mm •HorizontalandverticalPCBmountavailable •Ratedcapacity25to550mAh.

CR2320

3.0Volts3.3grams(0.10oz.)0.83cubiccentimeters(0.05cubicinch)

CYG2320

CYBERGATE

Description Clare’sCybergate™23XXDAAmodulesprovideacompletetelephonelineinterfacecircuitinasmall1.07x1.07x0.4package.Thismoduleprovidesafastandcosteffectivesolutionfordesignsthatrequireaninterfacetothetelephoneline.TheCYG23XX0isdesignedtomeetPTTands

CYG2320

CybergateDAA

CZRB2320

SurfaceMountZenerDiodes

DA2320-AL

SMTGateDriveTransformers

DA2320-AL_

SMTGateDriveTransformers