N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 110A, RDS(ON) = 5.0mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 7.2mW @VGS = 4.5V.

文件：527.92 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 85A, RDS(ON) = 5.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 7.5mW @VGS = 4.5V.

文件：696 Kbytes 页数：5 Pages

CET-MOS

华瑞

INTELLIGENT POWER HIGH SIDE SWITCH

文件：414.8 Kbytes 页数：11 Pages

IRF

CMOS Quad Micropower Operational Amplifier

文件：387.91 Kbytes 页数：12 Pages

NSCNational Semiconductor (TI)

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