N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V, 140A, RDS(ON) = 3.3mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 4.5mW @VGS = 4.5V.

文件：463.65 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V, 115A, RDS(ON) = 2.7mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 3.8mW @VGS = 4.5V. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件：439.93 Kbytes 页数：5 Pages

CET-MOS

华瑞

BROADBAND: RF & WIRELESS

RF, HFC & CATV APPLICATIONS Pluse offers a comprehensive line of RF magnetic components for use in wireless and RF applications, including mobile communications, cable television, hybrid fiber/coax (HFC) equipment, cable modems, set-top boxes, and home networking. The components are al

文件：81.47 Kbytes 页数：2 Pages

PULSE

High sensitivity (user can adjust itself)

文件：1.00088 Mbytes 页数：12 Pages

HMSEMI

华之美半导体