N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 190A, RDS(ON) = 4.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：401.04 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 190A, RDS(ON) = 4.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：615.62 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

Glass Passivated Super Fast Recovery Rectifier

文件：674.83 Kbytes 页数：2 Pages

YENYO

元耀科技