CEP1310SL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,88A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CEU1310S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,74A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant

CEU1310SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,76A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11.5mW@VGS=4.5V.

CLV1310A

LOWCOST-HIGHPERFORMANCEVOLTAGECONTROLLEDOSCILLATOR

CLV1310A-LF

VOLTAGECONTROLLEDOSCILLATOR

CLV1310A-LF

Voltage-ControlledOscillatorSurfaceMountModule

CLV1310A-LF

Voltage-ControlledOscillatorSurfaceMountModule

CPDX1310A

HighCurrentPowerInductor

Features: Corematerial:Composite. Coreandwindingloss: www.codaca.com/DesignTool_Power-Inductor-Loss-Comparison. html Environmental:RoHScompliant,halogenfree. Weight:8.00g MoistureSensitivity:Level(MSL)1 (Unlimitedfloorlifeat

CSMB1310

MagneticBuzzer(DC)

CSMT1310

SMDMagneticTransducer(AC)