N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：905.88 Kbytes 页数：5 Pages

CET-MOS

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：421.19 Kbytes 页数：5 Pages

CET-MOS

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N Channel MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V, 6.8A, RDS(ON) = 0.72W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：428.37 Kbytes 页数：5 Pages

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High Power DPDT Switch with Logic Control

文件：75.43 Kbytes 页数：4 Pages

SonySony Corporation

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8CH GND/OPEN DISCRETE INTERFACE IC W/ EXT HV PROTECTION

文件：805.42 Kbytes 页数：13 Pages

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