N Channel Product

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：147.38 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 4.8 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：276.66 Kbytes 页数：3 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 6 Ampere FEATURE * Small flat package. (SC-74/SOT-457) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications

文件：384.9 Kbytes 页数：3 Pages

CHENMKO

力勤