Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■ 30V, 3.7A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capab

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CET

华瑞

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

CET

华瑞

Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 30 Volts CURRENT 3.7 Ampere P-channel: VOLTAGE 30 Volts CURRENT 2.9 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo mo

文件：321.79 Kbytes 页数：3 Pages

CHENMKO

力勤

Power MOSFET(Vdss=-30V)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：134.65 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：224.24 Kbytes 页数：10 Pages

IRF