Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5.3A, RDS(ON) = 45mW @VGS = -10V. RDS(ON) = 80mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：670.64 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

N-Channel Silicon MOSFET General-Purpose Switching Device

Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.

文件：39.08 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel 100 V (D-S) MOSFET

文件：1.91625 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

4A, Synchronous Step-Down Converter

文件：201.23 Kbytes 页数：2 Pages

EUTECHEutech Microelectronics Inc

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