Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -5.1A, RDS(ON) = 48mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. RDS(ON) = 115mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

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Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5.1A, RDS(ON) = 48mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. RDS(ON) = 115mW @VGS = -2.5V.

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P Channel MOSFET

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文件：27.75 Kbytes 页数：4 Pages

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General Description The MAX3406/MAX3407/MAX3408 are general-purpose line-terminating networks designed to change the termination value of a line, depending on the state of a digital control line, allowing the connection to a coaxial cable or a twisted pair wire. These devices are switchable betwe

文件：132.62 Kbytes 页数：6 Pages

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