N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 8.0A, RDS(ON) = 25mW @VGS = 10V. RDS(ON) = 28mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 35mW @VGS = 2.5V.

文件：441.66 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 26A, RDS(ON) = 25mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 39mW @VGS = 4.5V. TO-251 & TO-252 package. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件：436.62 Kbytes 页数：5 Pages

CET-MOS

华瑞

Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs

GENERAL DESCRIPTION The DS3251 (single), DS3252 (dual), DS3253 (triple), and DS3254 (quad) line interface units (LIUs) perform the functions necessary for interfacing at the physical layer to DS3, E3, or STS-1 lines. Each LIU has independent receive and transmit paths and a built-in jitter attenu

文件：925.55 Kbytes 页数：71 Pages

Dallas

Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs

文件：909.17 Kbytes 页数：71 Pages

Maxim

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