Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 10A, RDS(ON) = 13mW @VGS = 10V. RDS(ON) = 20mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：496.71 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

PIN Photodiode

PIN Photodiode For optical control systems Features ● High sensitivity and low dark current ● For one-dimensional light-point position detection ● Good positional linearity ● Small plastic package

文件：44.74 Kbytes 页数：2 Pages

PANASONIC

松下

TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE

Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced GaAs HBT process, and has been designed for u

文件：195.78 Kbytes 页数：10 Pages

RFMD

威讯联合

TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE

Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced GaAs HBT process, and has been designed for u

文件：195.78 Kbytes 页数：10 Pages

RFMD

威讯联合