Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 10A, RDS(ON) = 13mW @VGS = 10V. RDS(ON) = 20mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：496.71 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 34A, RDS(ON) = 12mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 19.5mW @VGS = 4.5V.

文件：707.3 Kbytes 页数：6 Pages

CET-MOS

华瑞

0.31 Inch Single Digit Display

文件：191.93 Kbytes 页数：6 Pages

CHINASEMI

0.31 Inch Single Digit Display

文件：190.29 Kbytes 页数：6 Pages

CHINASEMI