Dual Enhancement Mode Field Effect Transistor(N and Channel)

FEATURES ■ 20V, 5A, RDS(ON) = 32mΩ @VGS = 4.5V. RDS(ON) = 43mΩ @VGS = 2.5V. ■ -20V, -4A, RDS(ON) = 95mΩ @VGS = -4.5V. RDS(ON) = 125mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

文件：849.17 Kbytes 页数：9 Pages

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Dual Enhancement Mode Field Effect Transistor(N and Channel)

CET

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文件：136.66 Kbytes 页数：1 Pages

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200 WATT WIDE INPUT DC-DC CONVERTERS SINGLE OUTPUT

Features • 100-200W Isolated Output • Regulated Outputs • Efficiency to 85 • Continuous Short Circuit Protection • 300KHz Switching Frequency • Industry Standard Full-Brick Package • 2 : 1 Input Range

文件：1.68319 Mbytes 页数：1 Pages

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