IXFH80N15Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

IXFH80N15Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas

IXFK80N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

IXFK80N15Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas

IXFR80N15Q

HiPerFETPowerMOSFETsISOPLUS247

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(

IXFT80N15Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas

RU80N15Q

N-ChannelAdvancedPowerMOSFET

RU80N15R

N-ChannelAdvancedPowerMOSFET

RU80N15S

N-ChannelAdvancedPowerMOSFET