CEF550A规格书原装现货华瑞CET-MOS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEF550A	文件：766.08 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 53mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. 文件：766.08 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF550A	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEP550	文件：643.01 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 33A, RDS(ON) = 40mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. 文件：643.01 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEP550A	文件：766.08 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 53mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. 文件：766.08 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEU550	文件：643.53 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 27A, RDS(ON) = 40mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. 文件：643.53 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS

更多CEF550A供应商更新时间2025-10-8 10:31:00