CEF550A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CEP550

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,33A,RDS(ON)=40mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CEP550A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CEU550

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,27A,RDS(ON)=40mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CRS550

PrecisionWirewoundResistors

Flameretardantcoating Non-inductivetypeavailable PrecisionType “Z”preforming;Otherpreformingavailable RoHsCompliant

CSMC550

5.0Amp.SurfaceMountSchottkyBarrierDiodes

CY550

StepperSystemController

DLP550HE

DLP550HE0.55SVGADigitalMicromirrorDevice

1Features •0.55-inchdiagonalmicromirrorarray –SVGA(800x600)array –13.68-μmmicromirrorpitch –±12°micromirrortiltangle(relativetoflatstate) –Designedforcornerillumination •LVDSinputdatabus •TheDLP550HEchipsetincludes: –DLP550HEDMD –DLPC4430controller –

DLP550JE

0.55XGADMD

DLP550JEFYA

0.55XGADMD