P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -13.2A, RDS(ON) = 110mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 150mW @VGS = -4.5V. RoHS compliant.

文件：532.74 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -3.8A, RDS(ON) = 110mW @VGS = -10V. RDS(ON) = 150mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：569.39 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -4.1A, RDS(ON) = 110mW @VGS = -10V. RDS(ON) = 150mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-223 package. RoHS compliant.

文件：502.37 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -13.2A, RDS(ON) = 110mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 150mW @VGS = -4.5V. RoHS compliant.

文件：532.74 Kbytes 页数：5 Pages

CET-MOS

华瑞