CED6076资料datasheet下载库存现货华瑞-114ic电子网

首页 >CED6076>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
CED6076	文件：414.16 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 65V, 48A, RDS(ON) = 8.7mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications DC-DC converters. Synchronous rectification. 文件：414.16 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CED6076	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEU6076	文件：414.16 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 65V, 48A, RDS(ON) = 8.7mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications DC-DC converters. Synchronous rectification. 文件：414.16 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
GPDN6076	文件：108.43 Kbytes Page：1 Pages	RECTIFIER DIODE RECTIFIER DIODE BLOCKING VOLTAGE UP TO 6000 V AVERAGE CURRENT 765 A SURGE CURRENT 11 kA 文件：108.43 Kbytes 页数：1 Pages	GPSEMI	GPSEMI
GPDN6076	文件：313.63 Kbytes Page：2 Pages	RECTIFIER DIODE 文件：313.63 Kbytes 页数：2 Pages	GPSEMI	GPSEMI

更多CED6076供应商更新时间2025-12-1 10:20:00