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CED55N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

文件:868.57 Kbytes 页数:4 Pages

CET

华瑞

CED55N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 55A, RDS(ON) = 16mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件:645.15 Kbytes 页数:4 Pages

CET-MOS

华瑞

CED55N10

N Channel MOSFET

CET

华瑞

CEU55N10

N-Channel MOSFET uses advanced SGT technology

文件:1.7768 Mbytes 页数:5 Pages

DOINGTER

杜因特

CEU55N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

文件:868.57 Kbytes 页数:4 Pages

CET

华瑞

CEU55N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 55A, RDS(ON) = 16mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件:645.15 Kbytes 页数:4 Pages

CET-MOS

华瑞

技术参数

  • BVDSS(V):

    100

  • Rds(on)mΩ@10V:

    16

  • ID(A):

    55

  • Qg(nC)@10V(typ):

    77

  • RθJC(℃/W):

    1.8

  • Pd(W):

    83.3

  • Configuration:

    Single

  • Polarity:

    N

供应商型号品牌批号封装库存备注价格
CET/華瑞
2022+
TO-251
50000
原厂代理 终端免费提供样品
询价
CET
25+
TO-251
1519
原装正品,假一罚十!
询价
PHI
24+
TSSOP48
17860
公司现货库存,支持实单
询价
CET
24+
TO-252
455
询价
SOT-252
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
CET
25+23+
TO252
75232
绝对原装正品现货,全新深圳原装进口现货
询价
CET/華瑞
23+
SOT252
50000
全新原装正品现货,支持订货
询价
CET
23+
SOT252
50000
全新原装正品现货,支持订货
询价
CET
09+
SOT252
2530
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
CET
23+
2800
正品原装货价格低
询价
更多CED55N10供应商 更新时间2025-10-13 14:04:00