P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -20A, RDS(ON) = 45mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 80mW @VGS = -4.5V. RoHS compliant.

文件：940.27 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5.9A, RDS(ON) = 45mW @VGS = -10V. RDS(ON) = 80mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：666.86 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -20A, RDS(ON) = 45mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 80mW @VGS = -4.5V. RoHS compliant.

文件：940.27 Kbytes 页数：5 Pages

CET-MOS

华瑞

Ultrahigh-Speed Switching Applications

Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.

文件：41.56 Kbytes 页数：4 Pages

SANYO

三洋