CED3080

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,57A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=14mΩ@VGS=4.5V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability Leadfreeproductisacquired. TO-251&TO-252package.

CEU3080

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,57A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=14mΩ@VGS=4.5V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability Leadfreeproductisacquired. TO-251&TO-252package.

CPS-3080-C

3UCompactPCIEN501558-portmanagedEthernetswitch

CSD3080H

SingleSCRPOW-R-BLOK??Modules400Amperes/800Volts

Description: PowerexSingleSCRPOW-R-BLOK™Modulesaredesignedforuseinapplicationsrequiringphasecontrolandisolatedpackaging.Themodulesareisolatedforeasymountingwithothercomponentsoncommonheatsinks. Features: □IsolatedMounting □MetalBaseplate □LowThermalImpeda

DP3080

TrenchN-MOSFET30V,3.9mΩ,80A

Features •UsesCRM(CQ)advancedTrenchMOStechnology •Extremelylowon-resistanceRDS(on)•ExcellentQgxRDS(on)product(FOM)•QualifiedaccordingtoJEDECcriteria Applications •Motorcontrolanddrive •Batterymanagement•UPS(UninterrupiblePowerSupplies)

DSTF3080C

Highfrequencyoperation

EE-SX3080

Photomicrosensor(Transmissive)

EGB3080FFG

MouldedCaseCircuitBreakers16-2500AmperesforIEC60947-2Applications

EGE3080FFG

MouldedCaseCircuitBreakers16-2500AmperesforIEC60947-2Applications

EGH3080FFG

MouldedCaseCircuitBreakers16-2500AmperesforIEC60947-2Applications