N Channel Product

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 700V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：403.3 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V, 1.6A, RDS(ON) = 6.75W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：614.75 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：134.8 Kbytes 页数：4 Pages

CET

华瑞