N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 62A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：399.88 Kbytes 页数：4 Pages

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华瑞

N Channel MOSFET

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 65A, RDS(ON) = 7.8mΩ(typ) @VGS = 10V. RDS(ON) = 10mΩ(typ) @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：98.83 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 57A, RDS(ON) = 9mΩ(typ) @VGS = 10V. RDS(ON) = 16mΩ(typ) @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：399.3 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 62A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：399.88 Kbytes 页数：4 Pages

CET

华瑞