N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

Polar Power MOSFET HiPerFET

文件：134.14 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 300A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·motor drive, DC-DC

文件：372.61 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：140.7 Kbytes 页数：5 Pages

IXYS

艾赛斯