N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 137A, RDS(ON) = 7.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

文件：645.67 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：649.58 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

100V N-Channel MOSFET

文件：679.96 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

PolarHV HiPerFET Power MOSFETs

文件：119.05 Kbytes 页数：5 Pages

IXYS

艾赛斯