CEB06N7数据表ic资料供应商报价华瑞CET-MOS-114ic电子网

首页 >CEB06N7>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
CEB06N7	文件：605.67 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：605.67 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEB06N7	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CED06N7	文件：623.49 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 5A, RDS(ON) = 2W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. 文件：623.49 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEF06N7	文件：605.67 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：605.67 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEP06N7	文件：381.13 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. 文件：381.13 Kbytes 页数：4 Pages	CET 华瑞	CET

更多CEB06N7供应商更新时间2025-12-14 14:02:00