CEB04N65A技术资料参数原装现货华瑞CET-MOS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEB04N65A	文件：505.8 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. 文件：505.8 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEB04N65A	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CED04N65	文件：472.74 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 3.2A, RDS(ON) = 2.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant. 文件：472.74 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CED04N65A	文件：479.27 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V@TJ max, 3.1A, RDS(ON) = 2.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Pb-free lead plating ; RoHS compliant. Halogen Free. 文件：479.27 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF04N65	文件：628 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：628 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS

更多CEB04N65A供应商更新时间2025-10-11 12:00:00