DR Filters

RFMi

Dual Enhancement Mode Field Effect Transistor(N and Channel)

FEATURES ■ 20V, 5A, RDS(ON) = 32mΩ @VGS = 4.5V. RDS(ON) = 43mΩ @VGS = 2.5V. ■ -20V, -4A, RDS(ON) = 95mΩ @VGS = -4.5V. RDS(ON) = 125mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

文件：849.17 Kbytes 页数：9 Pages

CET

华瑞

20 WATT OPEN FRAME AC-DC MODULES

文件：321.12 Kbytes 页数：2 Pages

Cincon

幸康电子

Dual N-Channel MOSFET

文件：672.09 Kbytes 页数：5 Pages

JIANGSU

长电科技