丝印：CDD0465B；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：439.83 Kbytes 页数：5 Pages

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丝印：CDD05120；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：295.56 Kbytes 页数：5 Pages

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丝印：CDD0665；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：296.08 Kbytes 页数：5 Pages

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丝印：CDD0665B；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：440.05 Kbytes 页数：5 Pages

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丝印：CDD08120V；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：297.26 Kbytes 页数：5 Pages

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丝印：CDD0865；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：295.98 Kbytes 页数：5 Pages

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丝印：CDD0865B；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features Temperature Independent Switching Behavior High Surge Current Capability Competitive VF 1.3V at rated current Low Conduction Loss Zero Reverse Recovery High junction temperature 175 oC Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard App

文件：440.57 Kbytes 页数：5 Pages

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丝印：CDD10120；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：295.12 Kbytes 页数：5 Pages

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丝印：CDD1065；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：296.78 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDD1065B；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：441.41 Kbytes 页数：5 Pages

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