CDCVF2310PW.A

CDCVF2310 2.5-V to 3.3-V High-Performance Clock Buffer

1Features 1•High-Performance1:10ClockDriver •Operatesupto200MHzatVDD3.3V •Pin-to-PinSkew

CDCVF2310PWR

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

CDCVF2310PWR

High-PerformanceClockBuffer

CDCVF2310PWR

CDCVF23102.5-Vto3.3-VHigh-PerformanceClockBuffer

1Features 1•High-Performance1:10ClockDriver •Operatesupto200MHzatVDD3.3V •Pin-to-PinSkew

CDCVF2310PWR.A

CDCVF23102.5-Vto3.3-VHigh-PerformanceClockBuffer

1Features 1•High-Performance1:10ClockDriver •Operatesupto200MHzatVDD3.3V •Pin-to-PinSkew

CEH2310

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,6.2A,RDS(ON)=33mΩ@VGS=10V. RDS(ON)=38mΩ@VGS=4.5V. RDS(ON)=55mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CEH2310L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,6.1A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=45mW@VGS=2.5V. RDS(ON)=60mW@VGS=1.8V.

CEN2310L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,4.8A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. RDS(ON)=45mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant. RDS(ON)=60mW@VGS=1.8V.

CES2310

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,4.8A,RDS(ON)=34mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=60mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2310L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,4.8A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. RDS(ON)=45mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=60mW@VGS=1.8V.