丝印：CDCE421A；Package：VQFN(RGE)；Fully-Integrated, Wide Range, Low-Jitter Crystal Oscillator Clock Generator

1FEATURES 2· Single Supply at 3.3 V for LVPECL or LVDS Operation · High-Performance Clock Multiplier, Incorporating Crystal Oscillator Circuitry with Integrated Frequency Synthesizer · Low Output Jitter: 380 fs RMS typical (from 10 kHz to 20 MHz) · Low Phase Noise at High Frequency (708-MH

文件：1.66476 Mbytes 页数：29 Pages

TI

德州仪器

2.6 mm Series

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PANASONIC

松下

RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

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MOTOROLA

摩托罗拉

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

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PANASONIC

松下