CDBD8060-HF资料使用说明书市场行情典琦-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CDBD8060-HF	文件：76.31 Kbytes Page：3 Pages	Chip Schottky Barrier Rectifier 文件：76.31 Kbytes 页数：3 Pages	COMCHIP 典琦	COMCHIP
CDBD8060-HF	文件：300 bytes Page：1 Pages	Chip Schottky Barrier Rectifier	Comchip 典琦	Comchip
CEB8060	文件：512.929 Kbytes Page：5 Pages	N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 80A, RDS(ON) = 10.0mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. 文件：512.929 Kbytes 页数：5 Pages	CET 华瑞	CET
CEB8060L	文件：518.549 Kbytes Page：5 Pages	N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 80A, RDS(ON) = 9.0mΩ @VGS = 10V. RDS(ON) = 12.0mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. 文件：518.549 Kbytes 页数：5 Pages	CET 华瑞	CET
CEB8060LR	文件：537.9 Kbytes Page：5 Pages	N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 80A, RDS(ON) = 9.0mΩ @VGS = 10V. RDS(ON) = 12.0mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. 文件：537.9 Kbytes 页数：5 Pages	CET 华瑞	CET

更多CDBD8060-HF供应商更新时间2021-9-14 10:50:00