S9013

GeneralPurposeTransistor

FEATURES Powerdissipation PCM:0.3W CollectorCurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operating&storagejunctiontemperature Tj,Tstg:-55°C~+150°C

S9013

NPNSiliconTransistor

S9013

NPNEPITAXIALPLANARTRANSISTOR

Description TheS9013isdesignedforusein1WoutputamplifierofportableradiosinclassBpush-pulloperation. Features •HighTotalPowerDissipation.(PT:625mW) •HighCollectorCurrent.(IC:500mA) •ComplementarytoS9012 •Excellentlinearity.

S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA） ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

S9013

PLASTICENCAPSULATETRANSISTORS

[SHENZHENSLSTECHNOLOGYCO.,LTD.] Features: PCandICarelarger,hFElinearityisgood; Applications: Usedinpoweramplifiercircuit,complementarytoS9012.

S9013

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. •Hightotalpowerdissipation.(PT=625mW) •HighCollectorCurrent.(IC=500mA) •ComplementarytoSS9012 •ExcellenthFElinearity.