CD6336

0.5W Zener Diode

Features SharpReverseCharacteristics LowReverseCurrentLevels HighReliabilityGoldBackMetal HighReliabilityTestedGrades.

CD6336

Package：模具；包装：卷带（TR） 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：VOLTAGE REGULATOR

CEB6336

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,28A,RDS(ON)=40mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CED6336

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,25A,RDS(ON)=41mΩ@VGS=10V. RDS(ON)=55mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEP6336

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,28A,RDS(ON)=40mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEU6336

N-ChannelMOSFETusesadvancedtrenchtechnology

CEU6336

N-Channel60-V(D-S)MOSFET

CEU6336

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,25A,RDS(ON)=41mΩ@VGS=10V. RDS(ON)=55mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CHM6336JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT5.8Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi

CR6336

Primarysidecontrolhighprecisionconstantcurrent/constantvoltagePWMpowerswitch

features Constantvoltageandconstantcurrentcontrol Fullvoltageoutputvoltageaccuracycanreach±5 ±1InternalReference Built-inhighvoltageMOSFET Primarysidecontrolmode,noneedforTL431andoptocoupler FlybackTopologyinDiscontinuousMode Withsoftstartfunction frequency