Hex Inverters, Open-Drain Outputs

Description The CD54AC05/3A and CD54ACT05/3A are hex inverters that utilize the Harris Advanced CMOS Logic technology. The CD54AC05/3A and CD54ACT05/3A have open-drain outputs     The CD54AC05/3A and CD54ACT05/3A are supplied in 14 lead dual-in-line ceramic packages (F suffix).    

文件：10.01 Kbytes 页数：1 Pages

Intersil

CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：1.92937 Mbytes 页数：27 Pages

TI

德州仪器

CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：2.03129 Mbytes 页数：30 Pages

TI

德州仪器

HEX INVERTERS WITH OPEN-DRAIN OUTPUTS

文件：328.38 Kbytes 页数：8 Pages

TI

德州仪器

HEX INVERTERS

文件：842.44 Kbytes 页数：12 Pages

TI

德州仪器

军用 6 通道 4.5V 至 5.5V 反相器

The 'ACT05 devices contain six independent inverters. These devices perform the Boolean function Y = A. The open-drain outputs require pullup resistors to perform correctly, and can be connected to other open-drain outputs to implement active-low wired-OR or active-high wired-AND functions. • Inputs Are TTL-Voltage Compatible\n• Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption\n• Fanout to 15 F Devices\n• SCR-Latchup-Resistant CMOS Process and Circuit Design\n• Exceeds 2-kV ESD Protection Per MIL-STD-883, Method 3015;

TI

德州仪器

CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：1.92937 Mbytes 页数：27 Pages

TI

德州仪器

CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：2.03129 Mbytes 页数：30 Pages

TI

德州仪器

丝印：5962-9068601QC；Package：CDIP；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：2.03129 Mbytes 页数：30 Pages

TI

德州仪器

丝印：5962-9068601QCA；Package：CDIP；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：1.92937 Mbytes 页数：27 Pages

TI

德州仪器