QUADRUPLE 2-INPUT POSITIVE-NOR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：1.64579 Mbytes 页数：24 Pages

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NOR GATES

文件：302.4 Kbytes 页数：9 Pages

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NOR GATES

文件：871.13 Kbytes 页数：13 Pages

TI

德州仪器

军用 4 通道、2 输入、4.5V 至 5.5V 或非门

The ’ACT02 devices contain four independent 2-input NOR gates that perform the Boolean function Y = A\\ • B\\ or Y = (A + B)\\ in positive logic. • Inputs Are TTL-Voltage Compatible\n• Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption\n• Balanced Propagation Delays\n• ±24-mA Output Drive Current \n• Fanout to 15 F Devices\n \n• SCR-Latchup-Resistant CMOS Process and Circuit Design\n• Exceeds 2-kV ESD Protection Per M;

TI

德州仪器

丝印：CD54ACT02F3A；Package：CDIP(J)；QUADRUPLE 2-INPUT POSITIVE-NOR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：1.64579 Mbytes 页数：24 Pages

TI

德州仪器

Quad 2-Input NOR Gate

Description The CD54AC02F3A and CD54ACT02F3A are quad 2-input NOR gates that utilize the Harris Advanced CMOS Logic technology. Features • This Circuit is Processed in Accordance to MIL-STD-883    and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Exceeds 2kV ESD Protection

文件：26.08 Kbytes 页数：4 Pages

INTERSIL

丝印：CD54ACT02F3A；Package：CDIP(J)；QUADRUPLE 2-INPUT POSITIVE-NOR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：1.64579 Mbytes 页数：24 Pages

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NOR GATES

文件：871.13 Kbytes 页数：13 Pages

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NOR GATES

文件：871.13 Kbytes 页数：13 Pages

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NOR GATES

文件：302.4 Kbytes 页数：9 Pages

TI

德州仪器