CD4000系列

HGSEMI

华冠

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 17A, RDS(ON) = 85mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

文件：507.03 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 17A, RDS(ON) = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5.0V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

文件：508.15 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES • 60 V, 15 A, RDS(ON) = 85mΩ @VGS = 10 V. • Super high dense cell design for extremely low RDS(ON) • High power and current handling capability. • TO-220 & TO-263 package.

文件：524.79 Kbytes 页数：5 Pages

CET

华瑞