HME1666

PAINTEDTEXTUREDGRAYRAL7035

HME1666

Armoireautoportantemodulaireenacierdouxdetype12

IME1666

Armoireautoportantemodulaireenacierdouxdetype12

KTA1666

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●Highspeedswitchingtime. ●Lowsaturationvoltage:VCE(sat)=-0.5V(Max) ●PC=1~2W(Mountedonceramicsubstrate) ●Smallflatpackage. ●Complementary:KTC4379. APPLICATIONS ●Poweramplifierapplication. ●Powerswitchingapplication.

KTA1666

Plastic-EncapsulateTransistors

FEATURES •Highspeedswitchingtime. •Lowsaturationvoltage:VCE(sat)=-0.5V(Max) •PC=1~2W(Mountedonceramicsubstrate) •Smallflatpackage. •Complementary:KTC4379. •Poweramplifierapplication.

KTA1666

TRANSISTOR(PNP)

FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

KTA1666

SiliconPNPtransistorinaSOT-89PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Lowsaturationvoltage,highspeedswitchingtime,smallflatpackage,ComplementarytoKTC4379. Applications Poweramplifierandswitchingapplications.

KTA1666

PNPTransistors

■Features ●SmallFlatPackage ●LowSaturationVoltage ●PowerAmplifierandSwitchingApplication ●ComlementarytoKTC4379

KTA1666

EPITAXIALPLANARPNPTRANSISTOR(POWERAMPLIFIER,POWERSWITCHING)

POWERAMPLIFIERAPPLICATIONS. POWERSWITCHINGAPPLICATIONS. FEATURES •LowSaturationVoltage:VCE(sat)=-0.5V(Max.)(IC=-1A) •HighSpeedSwitchingTime:tstg=1.0μS(Typ.) •PC=1~2W(MountedonCeramicSubstrate) •SmallFlatPackage. •ComplementarytoKTC4379.

KTA1666

TRANSISTOR(PNP)

FEATURES ●ComplementarytoKTC4379 ●SmallFlatPackage ●LowSaturationVoltage ●PowerAmplifierandSwitchingApplication