CURRENT REGULATOR CHIPS

• CURRENT REGULATOR CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • CONSTANT CURRENT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW

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MICROSEMI

美高森美

CURRENT REGULATOR CHIPS

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CDI-DIODE

Current Regulator Diodes

FEATURES:• CURRENT REGULATOR CHIPS• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE• CONSTANT CURRENT OVER WIDE VOLTAGE RANGE• HIGH SOURCE IMPEDANCE• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,WITH THE EXCEPTION OF SOLDER REFLOW

Microchip

微芯科技

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

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MOTOROLA

摩托罗拉

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

文件：235.36 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

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NTE