1024-Element High Speed Linear Image Sensor

FEATURES • 1024 x 1 photosite array • 13 μm x 13 μm photosites on 13μm pitch • High speed: up to 20 MHz data rate • Enhanced spectral response • Low dark signal • High responsivity • On-chip clock drivers • Dynamic range typical: 7500:1 • Over 1 V peak-to-peak outputs • Special selection

文件：655.87 Kbytes 页数：12 Pages

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NPN Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated NPN transistors in one package. * Built in bi

文件：143.57 Kbytes 页数：3 Pages

CHENMKO

力勤

Photo-IC Sensors Digital Output

文件：198.6 Kbytes 页数：4 Pages

CLAIREX

Photo-IC Sensors Digital Output

文件：198.6 Kbytes 页数：4 Pages

CLAIREX