丝印：CC1190；Package：VQFN；850 – 950 MHz RF Front End

1FEATURES • Seamless Interface to Sub-1 GHz Low Power RF Devices from Texas Instruments • Up to 27 dBm (0.5 W) Output Power • 6 dB Typical Sensitivity Improvement with CC11xx and CC430 • Few External Components – Integrated PA – Integrated LNA – Integrated Switches – Integrated Matching

文件：1.07847 Mbytes 页数：20 Pages

TI

德州仪器

丝印：CC1190；Package：VQFN(RGV)；850 – 950 MHz RF Front End

1FEATURES • Seamless Interface to Sub-1 GHz Low Power RF Devices from Texas Instruments • Up to 27 dBm (0.5 W) Output Power • 6 dB Typical Sensitivity Improvement with CC11xx and CC430 • Few External Components – Integrated PA – Integrated LNA – Integrated Switches – Integrated Matching

文件：1.11639 Mbytes 页数：23 Pages

TI

德州仪器

K Band Mixer

Description The CHM1190 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the BESMMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithogr

文件：89.89 Kbytes 页数：6 Pages

UMS

Ultra High Speed Operational Amplifier

文件：778.15 Kbytes 页数：11 Pages

LINER

凌力尔特

Ultra High Speed Operational Amplifier

文件：778.15 Kbytes 页数：11 Pages

LINER

凌力尔特