丝印：Cc；Package：SSOP3；Standard CMOS Voltage Detector IC

Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel

文件：507.55 Kbytes 页数：18 Pages

ROHM

罗姆

丝印：CC；Package：SOD-323；Bidirectional Ultra Low Capacitance TVS Array

Description The ESDCxxC and Series meets IEC 61000-4-2 The ESDCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations

文件：724.62 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：CC；Package：SOD-123；Zener Diodes

Features ● Zener Voltage 1.8V-43V ● Very Sharp Reverse Characteristic ● VZ – tolerance ± 5 ● High Reliability

文件：893.94 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：CC；Package：SOT-23；SILICON PLANAR ZENER DIODES

文件：239.22 Kbytes 页数：3 Pages

SEMTECH

先之科

丝印：CC；Package：SC-90；0.5 A very low VF MEGA Schottky barrier rectifiers

Features * Forward current: 0.5 A * Very low forward voltage * Flat lead SMD package

文件：710.72 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：CC；Package：SOD128；High-temperature 600 W Transient Voltage Suppressor

1. General description 600 W unidirectional Transient Voltage Suppressor (TVS) in a SOD128 small and flat lead Surface- Mounted Device (SMD) plastic package, designed for transient overvoltage protection in hightemperature applications. 2. Features and benefits • Rated peak pulse power: PPPM

文件：227.52 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：CC；Package：SOD-323；Single Line TVS Diode for ESD

FEATURES ® 350 Watts peak pulse power (1p=8/20 1 s) ® Protects one IO or power line ® Low clamping voliage ® Working voltage:3.3V,5V.8V.12V,15V.24V,36V ® Lowleakage current @ Solid-state silicon avalanche technology APPLICATIONS ® Cell Phone Handsets and Accessories ® Microprocessor based

文件：1.30179 Mbytes 页数：7 Pages

DGNJDZ

南晶电子

丝印：CC；Package：SOD-323；Single Line TVS Diode for ESD

FEATURES ® 350 Watts peak pulse power (1p=8/20 1 s) ® Protects one IO or power line ® Low clamping voliage ® Working voltage:3V,5V,8V,12V,15V,24V, 36V ® Lowleakage current @ Solid-state silicon avalanche technology APPLICATIONS ® Cell Phone Handsets and Accessories ® Microprocessor based

文件：909.56 Kbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：CC；Package：SOT-23；N-Channel JFETs

DESCRIPTION The 2N/PN/SST4391 series features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applications and for specialized amplifier circuits. The 2N series hermetically-sealed TO-206AA (TO-18) can is available with processing per MIL-

文件：82.31 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：CC；Package：SOD-323；1-Line Low Capacitance Bi-directional TVS Diode

文件：551.99 Kbytes 页数：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司