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CAT22C10WE-20-T1

256-Bit Nonvolatile CMOS Static RAM

DESCRIPTION The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile E2PROM array which allows for easy transfer of data from RAM array to E2PROM (STORE) and from E2PROM to RAM (RECALL). STORE op

文件:177.2 Kbytes 页数:10 Pages

ONSEMI

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CAT22C10WE-30-T1

256-Bit Nonvolatile CMOS Static RAM

DESCRIPTION The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile E2PROM array which allows for easy transfer of data from RAM array to E2PROM (STORE) and from E2PROM to RAM (RECALL). STORE op

文件:177.2 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

CAT22C10WI-20-T1

256-Bit Nonvolatile CMOS Static RAM

DESCRIPTION The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile E2PROM array which allows for easy transfer of data from RAM array to E2PROM (STORE) and from E2PROM to RAM (RECALL). STORE op

文件:177.2 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

CAT22C10WI-30-T1

256-Bit Nonvolatile CMOS Static RAM

DESCRIPTION The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile E2PROM array which allows for easy transfer of data from RAM array to E2PROM (STORE) and from E2PROM to RAM (RECALL). STORE op

文件:177.2 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

CAT22C10W-20-TE13

256-Bit Nonvolatile CMOS Static RAM

文件:508.9 Kbytes 页数:10 Pages

CATALYST

CAT22C10W-30-TE13

256-Bit Nonvolatile CMOS Static RAM

文件:508.9 Kbytes 页数:10 Pages

CATALYST

CAT22C10WA-20-TE13

256-Bit Nonvolatile CMOS Static RAM

文件:508.9 Kbytes 页数:10 Pages

CATALYST

CAT22C10WA-30-TE13

256-Bit Nonvolatile CMOS Static RAM

文件:508.9 Kbytes 页数:10 Pages

CATALYST

CAT22C10WE-20-T1

256-Bit Nonvolatile CMOS Static RAM

文件:177.2 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

CAT22C10WE-30-T1

256-Bit Nonvolatile CMOS Static RAM

文件:177.2 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

详细参数

  • 型号:

    CAT22C10W

  • 功能描述:

    NVRAM 256-Bit N V CMOS Static RAM

  • RoHS:

  • 制造商:

    Maxim Integrated

  • 数据总线宽度:

    8 bit

  • 存储容量:

    1024 Kbit

  • 组织:

    128 K x 8

  • 接口类型:

    Parallel

  • 访问时间:

    70 ns

  • 电源电压-最大:

    5.5 V

  • 电源电压-最小:

    4.5 V

  • 工作电流:

    85 mA

  • 最大工作温度:

    + 70 C

  • 最小工作温度:

    0 C

  • 封装/箱体:

    EDIP

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
CSI
24+
SO16L
1200
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CSI
25+
SO16L
1000
原装现货热卖中,提供一站式真芯服务
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CSI
24+
SO16L
4652
公司原厂原装现货假一罚十!特价出售!强势库存!
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CSI
23+
SO16L
50000
全新原装正品现货,支持订货
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CSI
95+
SO16L
1000
原装现货
询价
TI
24+
QFN
6512
公司现货库存,支持实单
询价
RCA
25+
DIP
17500
原装现货 自家库存 欢迎来电
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ICS
25+
DIP8
3000
全新原装、诚信经营、公司现货销售!
询价
专营CAT
23+
DIP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
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SEIKO/精工
25+
DIP18
73
全新原装正品支持含税
询价
更多CAT22C10W供应商 更新时间2026-4-3 16:30:00