1700 V, 380 A, Silicon Carbide, Half-Bridge Module

Technical Features • Ultra-Low Loss, High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Anti-Parallel Schottky Diode • Temperature-Independent Switching Behavior Applications • Railway, Traction, and Motor Drives • EV Chargers •

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WOLFSPEED

HM Power Module Family

High Performance 62mm FootprintLow Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced LossesHigh Junction Temperature (175 °C) OperationConfigurations Available with both Second & Third Generation SiC MOSFETsLightweight AlSiC BaseplateSilicon Nitride Insulator f • High Performance 62mm Footprint\n• Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses\n• High Junction Temperature (175 °C) Operation\n• Configurations Available with both Second & Third Generation SiC MOSFETs\n• Lightweight AlSiC Baseplate\n• Silic;

Wolfspeed(CREE)

传感器

LEM/莱姆

上传：天津市博通航睿技术有限公司

传感器

LEM

莱姆

上传：深圳市鹏华威电子有限公司

传感器

LEM/莱姆

上传：天津市博通航睿技术有限公司