1200 V, 300 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module

Technical Features • Industry Standard 62mm Footprint • Ultra Low Loss , High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator VDS 1200 V IDS 300 A

文件：776.86 Kbytes 页数：11 Pages

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1.2kV, 5.0 m廓 All-Silicon Carbide Half-Bridge Module

文件：849.47 Kbytes 页数：8 Pages

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62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form FactorStrong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment ApplicationsLow-Inductance Design (10 – 15 nH) for Fast Switching with Low Power LossesMOSFET Die and • Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form Factor\n• Strong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment Applications\n• Low-Inductance Design (10 – 15 nH) for Fast Switching with Low Power Losses\n• ;

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Half-Bridge Module

文件：1.87346 Mbytes 页数：9 Pages

CREE

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