CAS300M12BM2

1200 V, 300 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module

TechnicalFeatures •IndustryStandard62mmFootprint •UltraLowLoss,High-FrequencyOperation •ZeroReverseRecoveryfromDiodes •ZeroTurn-offTailCurrentfromMOSFET •Normally-off,Fail-safeDeviceOperation •CopperBaseplateandAluminumNitrideInsulator VDS1200V IDS300A

CAS300M12BM2

1.2kV, 5.0 m廓 All-Silicon Carbide Half-Bridge Module

CAS300M12BM2_14

Half-Bridge Module

WAS300M12BM2

1.2kV,4.2mohmAll-SiliconCarbideTHB-80Half-BridgeModule

WAS300M12BM2

All-SiCPowerModule

FEATURES ·VDS=1200V,RDS(on)=5.3mΩ（max） ·ZeroReverseRecoveryCurrentfromDiode ·ZeroTurn-OffTailCurrentfromMOSFET ·High-FrequencyOperation ·EaseofParalleling ·UltraLowLoss APPLICATIONS ·SolarandWindInverters ·UPSandSMPS ·MotorDrives