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CAHC1G126QDBVRQ1

丝印:39NH;Package:SOT-23;SN74AHC1G126-Q1 Automotive Single Bus Buffer Gate With 3-State Output

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Operating range of 2-V to 5.5-V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5

文件:1.17793 Mbytes 页数:25 Pages

TI

德州仪器

CAHC1G126QDCKRQ1

丝印:1QI;Package:SC70;SN74AHC1G126-Q1 Automotive Single Bus Buffer Gate With 3-State Output

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Operating range of 2-V to 5.5-V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5

文件:1.17793 Mbytes 页数:25 Pages

TI

德州仪器

CAHC1G126QDCKRQ1

丝印:1QI;Package:SC70;SN74AHC1G126-Q1 Automotive Single Bus Buffer Gate With 3-State Output

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Operating range of 2-V to 5.5-V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at 5

文件:969.55 Kbytes 页数:21 Pages

TI

德州仪器

CAHC1G86BMDCKREP

丝印:CGB;Package:SC70;SN74AHC1G86B-EP Enhanced Product, Single 2-Input Exclusive-OR Gate

1 Features • Operating range 2V to 5.5V VCC • Low delay, 4.3ns typ. (25°C, 5V) • Latch-up performance exceeds 250mA per JESD 17 • Supports defense and aerospace applications: – Controlled baseline – One assembly and test site – One fabrication site – Extended product life cycle – Product

文件:1.0758 Mbytes 页数:26 Pages

TI

德州仪器

CAHC1G86BMDCKREP

丝印:CGB;Package:SC70;SN74AHC1G86B-EP Enhanced Product, Single 2-Input Exclusive-OR Gate

1 Features • Operating range 2V to 5.5V VCC • Low delay, 4.3ns typ. (25°C, 5V) • Latch-up performance exceeds 250mA per JESD 17 • Supports defense and aerospace applications: – Controlled baseline – One assembly and test site – One fabrication site – Extended product life cycle – Product

文件:1.03849 Mbytes 页数:24 Pages

TI

德州仪器

CAHC1G86BMDCKREP.A

丝印:CGB;Package:SC70;SN74AHC1G86B-EP Enhanced Product, Single 2-Input Exclusive-OR Gate

1 Features • Operating range 2V to 5.5V VCC • Low delay, 4.3ns typ. (25°C, 5V) • Latch-up performance exceeds 250mA per JESD 17 • Supports defense and aerospace applications: – Controlled baseline – One assembly and test site – One fabrication site – Extended product life cycle – Product

文件:1.0758 Mbytes 页数:26 Pages

TI

德州仪器

CAHCT125QPWRG4Q1

丝印:HB125Q;Package:TSSOP;SN74AHCT125-Q1 Automotive Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • Functional Safety Capable – Documentation available to aid safety system design 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • E

文件:1.51325 Mbytes 页数:25 Pages

TI

德州仪器

CAHCT125QWBQARQ1

丝印:AT125Q;Package:WQFN;SN74AHCT125-Q1 Automotive Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • Functional Safety Capable – Documentation available to aid safety system design 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • E

文件:1.51325 Mbytes 页数:25 Pages

TI

德州仪器

CAHCT126QPWRG4Q1

丝印:HB126Q;Package:TSSOP;SN74AHCT126-Q1 Automotive Quadruple Bus Buffer Gate with 3-State Outputs

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN (WBQA) package • Operating range of 4.5 V to 5.5 V • ±8-mA output dr

文件:1.60308 Mbytes 页数:25 Pages

TI

德州仪器

CAHCT126QWBQARQ1

丝印:AT126Q;Package:WQFN;SN74AHCT126-Q1 Automotive Quadruple Bus Buffer Gate with 3-State Outputs

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN (WBQA) package • Operating range of 4.5 V to 5.5 V • ±8-mA output dr

文件:1.60308 Mbytes 页数:25 Pages

TI

德州仪器

技术参数

  • Timing:

    TRIP DELAY

  • Timing Range:

    SENSING DELAY ON STARTUP

  • Input Voltage:

    120V AC

  • Output:

    10A SPDT

供应商型号品牌批号封装库存备注价格
SOT-
17+
TEXAS
6200
100%原装正品现货
询价
TEXAS/TI/德州
24+
SOT-353SOT-323-5
7200
新进库存/原装
询价
TI
24+
TSSOP14
5000
全现原装公司现货
询价
TI
23+
SOT353
8560
受权代理!全新原装现货特价热卖!
询价
SOT-353
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
TI
25+23+
SOT-353
42779
绝对原装正品现货,全新深圳原装进口现货
询价
N
25+
5800
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TEXAS
18+
SC70
16784
全新原装现货,可出样品,可开增值税发票
询价
TI/BB
19+
面谈
6000
TSSOP14
询价
TI
三年内
1983
只做原装正品
询价
更多CAH供应商 更新时间2025-11-24 16:00:00