2300 V, 6.0 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Aluminium Nitride Substrate • Optional Pre-Applied Thermal Interface Material Typical Applications • DC Fast Chargers • Energy Storage Sys

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WOLFSPEED

栅极驱动板

2300 V, 6 mΩ, GM package, Half-Bridge (AlN substrate) SiC Power Module • Leading silicon carbide MOSFET technology in an industry standard form factor\n• High CTI housing to reduce creepage requirements\n• Built in NTC\n• Press-Fit connections\n• Available with pre-applied thermal interface material;

Wolfspeed(CREE)

栅极驱动板

2300 V, 6 mΩ, GM package, Half-Bridge (AlN substrate) SiC Power Module with Pre-Applied Thermal Interface Material (TIM) • Leading silicon carbide MOSFET technology in an industry standard form factor\n• High CTI housing to reduce creepage requirements\n• Built in NTC\n• Press-Fit connections\n• Available with pre-applied thermal interface material;

Wolfspeed(CREE)

HTSSOP16

TI

德州仪器

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SOP8

CHIPANAL

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