3300 V, 2.7 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features •High Power Density Footprint •High Junction Temperature (175 °C) Operation •Low Stray Inductance (9.5 nH) •AlSiC Baseplate •High Thermal Conductivity Silicon Nitride Substrate •Increased Thermal-Mechanical Performance •3300 V Drain-Source Voltage Typical Applications

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WOLFSPEED

Gate Driver Boards

Wolfspeed has developed the LM power module platform to provide the benefits of Silicon Carbide in applications that require increased power density, high reliability, faster switching and long lifetime. The LM module enables 150°C continuous junction temperature operation with Silicon Nitride (Si3N • Low RDS(ON)\n• Low Stray Inductance\n• Increased Thermal Performance\n• High Temperature Operation\n• AlSiC Baseplate;

Wolfspeed(CREE)

HTSSOP16

TI

德州仪器

上传：深圳市金芯世纪电子有限公司

SOP8

CHIPANAL

上传：深圳市恒科翔业电子有限公司

SOIC-16-300mil

Chipanalog(川土微)

上传：深圳市禾兴威科技有限公司