1200 V, 2.6 mΩ, Silicon Carbide, Half-Bridge Module

Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low-Inductance (6.7 nH) Design • Implements Wolfspeed’s Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate • Advanced Direct Cooling Baseplate Typical A

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WOLFSPEED

分立式 MOSFET

1200 V, 2.6 mΩ, XM, Half-Bridge, Industrial qualified, Silicon Carbide (SiC) Power Module with Direct-Cooled Pin Fin Baseplate

Wolfspeed(CREE)

HTSSOP16

TI

德州仪器

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SOIC-16-300mil

Chipanalog(川土微)

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MOT

上传：深圳市毅创弘电子科技有限公司